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Solid inclusion complexes of vanillin with cyclodextrins: Their formation, characterization, and high-temperature stability

机译:香兰素与环糊精的固体包合物:其形成,表征和高温稳定性

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摘要

This study reports the formation of solid vanillin/cyclodextrin inclusion complexes (vanillin/CD ICs) with the aim to enhance the thermal stability and sustained release of vanillin by inclusion complexation. The solid vanillin/CD ICs with three types of CDs (α-CD, β-CD, and γ-CD) were prepared using the freeze-drying method; in addition, a coprecipitation method was also used in the case of γ-CD. The presence of vanillin in CD ICs was confirmed by FTIR and 1H NMR studies. Moreover, 1H NMR study elucidated that the complexation stoichiometry for both vanillin/β-CD IC and vanillin/γ-CD IC was a 1:1 molar ratio, whereas it was 0.625:1 for vanillin/α-CD IC. XRD studies have shown channel-type arrangement for CD molecules, and no diffraction peak for free vanillin was observed for vanillin/β-CD IC and vanillin/γ-CD IC, indicating that complete inclusion complexation was successfully achieved for these CD ICs. In the case of vanillin/α-CD IC, the sample was mostly amorphous and some uncomplexed vanillin was present, suggesting that α-CD was not very effective for complexation with vanillin compared to β-CD and γ-CD. Furthermore, DSC studies for vanillin/β-CD IC and vanillin/γ-CD IC have shown no melting point for vanillin, elucidating the true complex formation, whereas a melting point for vanillin was recorded for vanillin/α-CD IC, confirming the presence of some uncomplexed vanillin in this sample. TGA thermograms indicated that thermal evaporation/degradation of vanillin occurred over a much higher temperature range (150-300 °C) for vanillin/CD ICs samples when compared to pure vanillin (80-200 °C) or vanillin/CD physical mixtures, signifying that the thermal stability of vanillin was increased due to the inclusion complexation with CDs. Moreover, headspace GC-MS analyses indicated that the release of vanillin was sustained at higher temperatures in the case of vanillin/CD ICs due to the inclusion complexation when compared to vanillin/CD physical mixtures. The amount of vanillin released with increasing temperature was lowest for vanillin/γ-CD IC and highest for vanillin/α-CD IC, suggesting that the strength of interaction between vanillin and the CD cavity was in the order γ-CD > β-CD > α-CD for solid vanillin/CD ICs. © 2011 American Chemical Society.
机译:这项研究报告了固体香兰素/环糊精包合物的形成(香兰素/ CD ICs),目的是通过包合物的结合来增强香兰素的热稳定性和持续释放。采用冷冻干燥法制备了具有三种CD(α-CD,β-CD和γ-CD)的固体香兰素/ CD IC。另外,对于γ-CD,也使用共沉淀法。 FTIR和1H NMR研究证实了CD IC中香兰素的存在。此外,1 H NMR研究表明,香草醛/β-CDIC和香草醛/γ-CDIC的络合化学计量比均为1:1,而香草醛/α-CDIC的络合化学计量比为0.625:1。 XRD研究表明CD分子呈通道型排列,而香兰素/β-CDIC和香兰素/γ-CDIC均未观察到游离香兰素的衍射峰,表明这些CD ICs成功实现了完全包合。就香草醛/α-CDIC而言,样品大部分为非晶态,并且存在一些未络合的香草醛,这表明与β-CD和γ-CD相比,α-CD对香草醛的络合作用不是很有效。此外,对香兰素/β-CDIC和香兰素/γ-CDIC的DSC研究表明,香兰素没有熔点,这说明了真正的络合物形成,而香兰素/α-CDIC记录了香兰素的熔点,证实了该样品中存在一些未络合的香兰素。 TGA热分析图表明,与纯香草醛(80-200°C)或香草醛/ CD物理混合物相比,香草醛/ CD ICs样品在更高的温度范围(150-300°C)内发生了香草醛的热蒸发/降解,这表明香草醛的热稳定性归因于与CD的包合作用。此外,顶空GC-MS分析表明,与香草醛/ CD物理混合物相比,由于香草醛/ CD ICs的夹杂物络合,香草醛的释放在较高温度下得以持续。随着温度的升高,香草醛/γ-CDIC释放出的香草醛量最低,而香草醛/α-CDIC释放的香草醛量最高,这表明香草醛与CD腔之间的相互作用强度为γ-CD>β-CD的顺序。 >α-CD,用于固体香兰素/ CD IC。 ©2011美国化学学会。

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    Kayaci F.; Uyar, T.;

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  • 年度 2011
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